Performance assessment of low temperature-grown GaAs-based optoelectronic devices dedicated to RF sampling applications

Author

Delord, J.-M. ; Roux, J.-F. ; Coutaz, J.-L. ; Breuil, N.

Author_Institution

IMEP-LAHC, Univ. of Savoie, Le Bourget du Lac, France

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

A large set of photoswitches (PSW) with different configurations is tested. Using the device with a shortest gap length leads to the generation of frequency harmonics while increasing RF input electrical power. Hence, the spurious free dynamic range (SFDR) is reduced when the RF power is increased up to 13 dBm. This results from an electrical nonlinear response which is partially due to carrier velocity saturation in LTG-GaAs. In accordance with the previous works, an electric field saturation of 14 kV/cm is measured.

Keywords

III-V semiconductors; cryogenic electronics; gallium arsenide; optical switches; optoelectronic devices; semiconductor device testing; GaAs; GaAs-based optoelectronic devices; RF sampling; electric field saturation; electrical nonlinear response; frequency harmonic generation; photoswitch; spurious free dynamic range; Optical pulses; Optical sensors; Optical waveguides; Optoelectronic devices; Power system harmonics; Pump lasers; RF signals; Radio frequency; Sampling methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5196242

Filename

5196242