DocumentCode
2861185
Title
Loss calculations in transistorized parallel resonant converters operating above resonance
Author
Bhat, A.K.S. ; Swamy, M.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fYear
1988
fDate
11-14 April 1988
Firstpage
583
Abstract
The optimum operating point corresponding to maximum efficiency for a parallel resonant converter (PRC) operating above resonance is obtained. A systematic way for calculating losses in a PRC operating above resonance is presented and illustrated for bipolar and MOS power transistor switches. Experimental results obtained with prototype converters using the above devices are given to support the theory. Both theory and experiments show that MOSFETs are better switching devices at a power level of about 1 kW.<>
Keywords
bipolar transistors; insulated gate field effect transistors; losses; power convertors; power transistors; 1 kW; MOS power transistor switches; MOSFETs; bipolar transistors; efficiency; losses; parallel resonant converters; power convertors; resonance; Diodes; Frequency conversion; Hafnium; Inductors; MOSFETs; Partial response channels; Resonance; Resonant inverters; Switches; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18184
Filename
18184
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