Title :
Loss calculations in transistorized parallel resonant converters operating above resonance
Author :
Bhat, A.K.S. ; Swamy, M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Abstract :
The optimum operating point corresponding to maximum efficiency for a parallel resonant converter (PRC) operating above resonance is obtained. A systematic way for calculating losses in a PRC operating above resonance is presented and illustrated for bipolar and MOS power transistor switches. Experimental results obtained with prototype converters using the above devices are given to support the theory. Both theory and experiments show that MOSFETs are better switching devices at a power level of about 1 kW.<>
Keywords :
bipolar transistors; insulated gate field effect transistors; losses; power convertors; power transistors; 1 kW; MOS power transistor switches; MOSFETs; bipolar transistors; efficiency; losses; parallel resonant converters; power convertors; resonance; Diodes; Frequency conversion; Hafnium; Inductors; MOSFETs; Partial response channels; Resonance; Resonant inverters; Switches; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18184
