Title :
Bipolar resistive switching in Al/ZrO2/Pt device fabricated at room temperature
Author :
Lin, Chun-Chieh ; Chang, Yi-Peng ; Lin, Huei-Bo ; Lin, Chu-Hsuan
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
ZrO2-based resistive random access memory possessing stable resistive switching is investigated in this work. The bipolar resistive switching found in Al/ZrO2/Pt device shows more promising for application due to its distinguishable switching voltages. Furthermore, good endurance and retention time with a large resistive ratio are also observed in the device. All the fabricating steps of the device were carried out at room temperature, and it is possible for application in flexible electronic equipments.
Keywords :
aluminium; platinum; random-access storage; switching circuits; zirconium compounds; Al-ZrO2-Pt; bipolar resistive switching; distinguishable switching voltages; flexible electronic equipments; resistive random access memory; temperature 293 K to 298 K; Electrodes; Films; Fitting; Flexible electronics; Nonvolatile memory; Resistance; Switches; bipolar resistive switching; non-volatile memory; resistive random access memory; retention time; zirconium oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991658
