Bipolar resistive switching in Al/ZrO2/Pt device fabricated at room temperature

Author

Lin, Chun-Chieh ; Chang, Yi-Peng ; Lin, Huei-Bo ; Lin, Chu-Hsuan

Author_Institution

Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

ZrO₂-based resistive random access memory possessing stable resistive switching is investigated in this work. The bipolar resistive switching found in Al/ZrO₂/Pt device shows more promising for application due to its distinguishable switching voltages. Furthermore, good endurance and retention time with a large resistive ratio are also observed in the device. All the fabricating steps of the device were carried out at room temperature, and it is possible for application in flexible electronic equipments.

Keywords

aluminium; platinum; random-access storage; switching circuits; zirconium compounds; Al-ZrO₂-Pt; bipolar resistive switching; distinguishable switching voltages; flexible electronic equipments; resistive random access memory; temperature 293 K to 298 K; Electrodes; Films; Fitting; Flexible electronics; Nonvolatile memory; Resistance; Switches; bipolar resistive switching; non-volatile memory; resistive random access memory; retention time; zirconium oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991658

Filename

5991658