DocumentCode :
2861311
Title :
Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)-√3×√3 surface
Author :
Tomaszewska, Agnieszka ; Huang, Xiao-Lan ; Lin, Chun-Liang ; Chang, Kuo-Wei ; Fu, Tsu-Yi
Author_Institution :
Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
2
Abstract :
Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)-√3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.
Keywords :
annealing; germanium; island structure; nanostructured materials; nickel; nucleation; scanning tunnelling microscopy; silver; thermal stability; Ag-Ge; Ag/Ge(111); Ni; Ni-Ge compounds formation; Ni-driven nanostructures growth; RT growth mode; STM; annealing; cluster nucleation; hexagonal-shaped islands; room temperature deposition; temperature 293 K to 298 K; temperature 800 degC; thermal stability; Annealing; Compounds; Nickel; Substrates; Surface morphology; Surface treatment; Thermal stability; Ag; Ge(111); Ni; STM; island growth;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991662
Filename :
5991662
Link To Document :
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