DocumentCode
2861325
Title
A novel technology for in situ MIC growth of low temperature nano/poly silicon thin film on ITO glass substrate
Author
Juang, Feng-Renn ; Fang, Yean-Kuen ; Zhong, Yong-Jie
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ. Tainan, Tainan, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
A novel method is applied to grow nano/poly Si thin films on ITO glass at temperature ~200°C. For the first time, through the in situ indium (In)-induced crystallization process, the nano/poly structure can be achieved during the growing amorphous Si by PECVD. SEM, XRD and Raman are used to characterize the deposited films. Besides, the growing mechanisms are also studied.
Keywords
crystallisation; glass; nanostructured materials; plasma CVD; substrates; ITO glass substrate; PECVD; SEM; XRD; crystallization process; in situ MIC growth; low temperature nano/poly silicon thin film; Annealing; Films; Glass; Indium tin oxide; Microwave integrated circuits; Plasma temperature; Silicon; AZO; ITO; MIC; PECVD; nano/poly silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991664
Filename
5991664
Link To Document