Graphene oxide for metal-insulator-semiconductor tunneling diodes

In this study, we have inserted the graphene oxide (GO) in the metal/insulator/semiconductor tunneling diodes. The graphene oxide devices reveal the better stability as compared with the control devices. At a small positive bias, different control devices have different magnitude of photocurrents, while photocurrents of GO devices have close magnitude. At 2 V, the photocurrent density of the GO device have a minimum value of 2.7×10-3 A/cm2, while the control device can only reach a maximum value of 1.4×10-3 A/cm2. The simple GO process can obviously improve the characteristics of metal/insulator/semiconductor tunneling diodes.