Investigation of post-annealing treatment on barrier layers for passivation flexible organic light-emitting diode

Author

Chou, D.W. ; Chen, Kan-Lin ; Huang, Chien-Jung ; Meen, Teen-Hang ; Chen, Wen-Ray ; Yang, Cheng-Fu

Author_Institution

Dept. of Aviation & Commun. Electron., Air Force Inst. of Technol., Kaohsiung, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

3

Abstract

Fluorinated silicon dioxide films by liquid phase deposition method were coated on plastic substrate as a moisture barrier layer. By the measurement of Fourier transform infrared absorption spectroscopy, the water-absorbed related peak was found after severe water-vapor test. After annealing under N₂ ambiences, the water-absorbed related peaks disappear and ability of resisting water absorption can be enhanced.

Keywords

Fourier transform spectra; annealing; fluorine; infrared spectra; liquid phase deposited coatings; organic light emitting diodes; passivation; silicon compounds; thin films; Fourier transform infrared absorption spectroscopy; SiO₂:F; fluorinated silicon dioxide films; liquid phase deposition method; moisture barrier layer; passivation flexible organic light-emitting diode; plastic substrate; post-annealing treatment; resisting water absorption; water-vapor test; Absorption; Annealing; Films; Plastics; Silicon compounds; Substrates; Vibrations; Fluorinated silicon dioxide; liquid phase deposition; moisture absorption; plastic substrate; post-annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991669

Filename

5991669