DocumentCode
2861422
Title
X-band GaAs Schottky barrier power FET with a high drain source breakdown voltage
Author
Fukuta, Masahiro ; Suyama, Koichi ; Suzuki, Hajime ; Nakayama, Yoshinori ; Ishikawa, Hiroshi
Author_Institution
Fujitsu Laboratories, Kawasaki, Japan
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
166
Lastpage
167
Abstract
This paper will describe a GaAs FET exhibiting 2.2-W output power at 1-dB gain compression with 21.6% power added efficiency at 8 GHz, developed by the introduction of N+buried layers into source and drain regions.
Keywords
Circuit testing; Electrodes; Electrons; Etching; FETs; Gallium arsenide; MESFETs; Power generation; Schottky barriers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155564
Filename
1155564
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