Chloride ion selective electrode for detection of low chloride ion concentration

Author

Chou, Jung-Chuan ; Su, Meng-Wei ; Liu, Chun-Hung ; Chen, Chien-Cheng

Author_Institution

Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this study, the ruthenium dioxide (RuO₂) thin film was deposited on silicon (Si) substrate by radio frequency (R. F.) sputtering system. In order to optimize the sensing property of the chloride ion sensing device, the chloride ion selective membrane was prepared on sensing window of Si/RuO₂ sensing device by dropping and spin coating methods, respectively. Furthermore, the chloride ion selective membrane was prepared by spin coating with different spinning rates, and the sensing property of chloride ion sensing device relating with spinning rate was investigated.

Keywords

elemental semiconductors; ruthenium compounds; silicon; spin coating; sputtering; substrates; RF sputtering system; RuO₂-Si; chloride ion selective electrode; chloride ion selective membrane; low chloride ion concentration; ruthenium dioxide thin film; sensing window; silicon substrate; spin coating methods; spinning rates; Coatings; Companies; Sensitivity; Sensors; Silicon; Temperature measurement; Voltage measurement; Chloride ion selective electrode; Dropping method; Ruthenium dioxide; Spin coating method; Spinning rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991671

Filename

5991671