Title :
Chloride ion selective electrode for detection of low chloride ion concentration
Author :
Chou, Jung-Chuan ; Su, Meng-Wei ; Liu, Chun-Hung ; Chen, Chien-Cheng
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
Abstract :
In this study, the ruthenium dioxide (RuO2) thin film was deposited on silicon (Si) substrate by radio frequency (R. F.) sputtering system. In order to optimize the sensing property of the chloride ion sensing device, the chloride ion selective membrane was prepared on sensing window of Si/RuO2 sensing device by dropping and spin coating methods, respectively. Furthermore, the chloride ion selective membrane was prepared by spin coating with different spinning rates, and the sensing property of chloride ion sensing device relating with spinning rate was investigated.
Keywords :
elemental semiconductors; ruthenium compounds; silicon; spin coating; sputtering; substrates; RF sputtering system; RuO2-Si; chloride ion selective electrode; chloride ion selective membrane; low chloride ion concentration; ruthenium dioxide thin film; sensing window; silicon substrate; spin coating methods; spinning rates; Coatings; Companies; Sensitivity; Sensors; Silicon; Temperature measurement; Voltage measurement; Chloride ion selective electrode; Dropping method; Ruthenium dioxide; Spin coating method; Spinning rate;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991671
