Title :
Growth mechanism of Co-2×2 islands on Ag/Ge(111)-√3×√3 surface
Author :
Huang, Xiao-Lan ; Lin, Chun-Liang ; Chen, Chun-Rong ; Tomaszewska, Agnieszka ; Fu, Tsu-Yi
Author_Institution :
Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.
Keywords :
cobalt; crystal growth; crystallography; germanium; island structure; scanning tunnelling microscopy; silver; Ag-Ge; Ag/Ge(111) surface; Co; Co atom; Co islands; STM images; crystallographic direction; hcp structure; island growth; lateral shift; Atomic layer deposition; Image reconstruction; Shape; Substrates; Surface morphology; Surface reconstruction; Surface treatment; Co; Ge(111); STM; island growth;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991672
