Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching

In this work, MOS photovoltaic mechanism with side wall trap-assist tunneling path by oxide etching was demonstrated. It was clearly observed that the photo response of device with oxide etching is tremendously enhanced with respect to that without. The efficiency of MOS photovoltaic with side wall trap-assist tunneling is strongly dependent on the etched potion of oxide. The perimeter of electrode is critical for MOS photovoltaic application.