DocumentCode
2861512
Title
Microwave FETs with improved amplifier stability
Author
Daniel Ch´en ; Cooke, H. ; Wholey, J. ; Policky, G.
Author_Institution
Avantek, Inc., Santa Clara, CA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
160
Lastpage
161
Abstract
A drift in dc and RF parameters with time has been observed in GaAs MESFETs. The paper will discuss this characteristic, traced to a surface depletion layer, which it was found can be eliminated by passivation of the GaAs surface.
Keywords
Electronics packaging; FETs; Intrusion detection; Manufacturing; Microwave amplifiers; Noise figure; Optical amplifiers; Radio frequency; Radiofrequency amplifiers; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155570
Filename
1155570
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