Title :
Microwave FETs with improved amplifier stability
Author :
Daniel Ch´en ; Cooke, H. ; Wholey, J. ; Policky, G.
Author_Institution :
Avantek, Inc., Santa Clara, CA, USA
Abstract :
A drift in dc and RF parameters with time has been observed in GaAs MESFETs. The paper will discuss this characteristic, traced to a surface depletion layer, which it was found can be eliminated by passivation of the GaAs surface.
Keywords :
Electronics packaging; FETs; Intrusion detection; Manufacturing; Microwave amplifiers; Noise figure; Optical amplifiers; Radio frequency; Radiofrequency amplifiers; Stability;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155570
