• DocumentCode
    2861534
  • Title

    Monolithic temperature stabilized voltage reference with 0.5 ppm/ ° drift

  • Author

    Dobkin, R.

  • Author_Institution
    National Semiconductor Corp., Santa Clara, CA, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    108
  • Lastpage
    109
  • Abstract
    This paper will cover a temperature-stabilized voltage reference which achieves a 0.5 ppm/°C temperature coefficient. A subsurface zener structure to minimize noise and enhance long term stability will be described.
  • Keywords
    Breakdown voltage; Circuits; Frequency; Low-frequency noise; Packaging; Power dissipation; Stability; Temperature distribution; Thermal resistance; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155572
  • Filename
    1155572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2861534