Ultra-low reflectance, high absorption microcrystalline silicon nano-stalagmite (µc-SiNS)

Author

Thiyagu, Subramani ; Pei, Zingway ; Chen, Yu-Hung ; Liu, Jun-Chin

Author_Institution

Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this work, microcrystalline silicon nano-stalagmite (μc-SiNS) arrays have been successfully fabricated on glass by catalytic etching process through a template. The template use polystyrene (PS) nanospheres with diameter and density of 30 ~ 50 nm and 10¹⁰/cm², respectively by a modified nano-phase separation of PS-containing block copolymer. The length of μc-SiNS could be controlled by the duration of etching time. The μc-SiNS exhibit ultra-low reflection approximately 0.3% and absorption around 99% over 300 to 800 nm in wavelength.

Keywords

catalysis; elemental semiconductors; etching; nanofabrication; nanostructured materials; phase separation; reflectivity; semiconductor growth; silicon; PS-containing block copolymer; catalytic etching; etching time; high-absorption microcrystalline silicon nanostalagmite; nanophase separation; polystyrene nanospheres; size 30 nm to 50 nm; ultralow reflectance; Absorption; Etching; Films; Photovoltaic cells; Photovoltaic systems; Silicon; Nanostalagmite; Polystyrene Nanospheres; light tapping; microcrystalline silicon; ultra-low reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991682

Filename

5991682