Title :
An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure
Author :
Das, Atanu ; Chang, Liann Be ; Lin, Ray Ming ; Maikap, Siddheswar
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS Schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; electron traps; gadolinium compounds; gallium compounds; wide band gap semiconductors; write-once storage; GaN-AlGaN-Gd2O3; MOS Schottky structure; WORM memory; charge retention; charge trapping; electron trapping; hysteresis window; positive pulse programming; time dependent natural charge loss; voltage 4.4 V; write once read many; Aluminum gallium nitride; Capacitance-voltage characteristics; Charge carrier processes; Films; Gallium nitride; Hysteresis; Logic gates; Charge trapping; GaN/AlGaN; memory; retention;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991688
