• DocumentCode
    2861758
  • Title

    I2L with self-aligned double-diffusion injector

  • Author

    Tokumaru, Y. ; Shinozaki, S. ; Nakai, Mitsuki ; Ito, Satoshi ; Nishi, Yoshio

  • Author_Institution
    Tokyo Shibaura Electric Co., Ltd., Kawasaki, Japan
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    A I2L structure embracing a self-aligned double diffusion injector will be described. A power delay product of 0.06 pJ/gate with a minimum delay of 10 ns at 80 μW have been obtained.
  • Keywords
    Boron; Circuits; Conductivity; Delay; Impurities; Indium tin oxide; Influenza; Silicon; Substrates; Tiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155587
  • Filename
    1155587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2861758