The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

Author

Lin, Woei-Tyng ; Lai, Fang-I ; Kuo, Shou-Yi ; Huang, Shao-Chun

Author_Institution

Dept. of Photonics Eng., Yuan-Ze Univ., Taoyuan, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron-chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.

Keywords

III-V semiconductors; gallium compounds; indium compounds; masks; nanorods; oxidation; photoelectrochemistry; photoluminescence; plasma materials processing; self-assembly; semiconductor quantum wells; sputter etching; wide band gap semiconductors; InGaN-GaN; InGaN/GaN nanorods; energy shift; inductively coupled plasma reactive ion etching; multiquantum well structure; photoelectrochemical oxidation; photoelectron-chemical methods; photoluminescence; quantum confinement effect; self-assembled nickel metal nanomasks; size 100 nm to 150 nm; strain relaxation; time 80 min; voltage 5 V; Etching; Gallium nitride; Nickel; Oxidation; Potential well; Quantum well devices; LED; PEC; nanorod;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991695

Filename

5991695