The analysis of AZO films made by a magnetic controlled DC sputtering system

Author

Shih, Neng Fu ; Zhang, Yue-Xun ; Lin, Chung-Hsuan

Author_Institution

Dept. of Electron. Eng., Hsiuping Inst. of Technol., Taichung, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Magnetic controlled dc sputtering method was used in the deposition of Al-doped ZnO (AZO) transparent conducting thin films. Effects of different process parameters, such as working pressure and substrate temperature, and compare properties of AZO films with RF sputtering in order to obtain best process parameters. Over 80% the transmittance of AZO film are observed at visible region (380 ~ 780 nm) with DC sputtering. The refraction decreased with increasing substrate temperature while the grain size, carrier concentration and carrier mobility increased with increasing substrate temperature.

Keywords

II-VI semiconductors; aluminium; carrier density; carrier mobility; grain size; semiconductor doping; semiconductor thin films; sputter deposition; visible spectra; wide band gap semiconductors; zinc compounds; AZO films; Al-doped ZnO; ZnO:Al; carrier concentration; carrier mobility; grain size; magnetic controlled DC sputtering system; substrate temperature; thin film deposition; transparent conducting thin films; visible region; wavelength 380 nm to 780 nm; working pressure; Conductivity; Films; Photonic band gap; Plasma temperature; Sputtering; Substrates; Temperature measurement; Al doped ZnO; magnetic controlled dc sputtering; transparent conducting thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991703

Filename

5991703