A novel retention-enhanced structure and a reset transient model for energy-efficient electrochemical conducting bridge resistive memory

A novel electrochemical conducting bridge structure with an ion buffer layer and a model of the reset transient behavior are proposed. The addition of the ion-buffer layer to the device retards the Cu-atom diffusing toward the Cu-ion supply layer, thus greatly increases the stability and produces excellent electrical properties. An analytical model is proposed to help understand the entire reset process. Three different types of current are investigated during the reset process: (i) ionic current (ii) tunneling current, and (iii) Ohmic current. Results from simulation and experiments show that the tunneling and the Ohmic currents consume most of the RESET power. To improve the operation efficiency and reduce the RESET current, a new device structure with a high work function tunneling layer is proposed to suppress the tunneling current.