Title :
The performance improvement of OTFT by the planar bottom-contact structure with Bi-layer gate dielectric
Author :
Fan, Ching-Lin ; Lin, Yu-Zuo ; Huang, Chao-Hung ; Lai, Hui-Lung ; Lin, Yi-Yan
Author_Institution :
Grad. Inst. of Electro-Opt. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
This study reports the performance improvement of a pentacene-based OTFT (organic thin-film transistor) with a planar bottom-contact structure, and investigates the influence of surface roughness of source/drain electrodes with planar structure on electrical characteristics. Because the contact resistance between the organic semiconductor and the source/drain is significantly decreased, the mobility of OTFT with planar structure is higher than that of conventional bottom-contact structure. And the rougher surface of electrodes can get the higher contact resistance to result in the inferior performance of OTFT.
Keywords :
contact resistance; dielectric materials; organic semiconductors; surface roughness; thin film transistors; OTFT mobility; bilayer gate dielectric; contact resistance; electrical characteristic; organic semiconductor; organic thin-film transistor; pentacene-based OTFT; planar bottom-contact structure; planar structure; source/drain electrode; surface roughness; Contact resistance; Dielectrics; Electrodes; Logic gates; Metals; Organic thin film transistors; OTFT; bottom-contact; planar and contact resistance;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991719
