Title :
Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels
Author :
Tuan-Kai Su ; Tsai, Tzu-I ; Chun-Jung Su ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Abstract :
In this paper, we demonstrate a junctionless (JL) polysilicon-oxide-nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.
Keywords :
carrier density; elemental semiconductors; nanowires; semiconductor device reliability; semiconductor doping; silicon; unijunction transistors; JL device; NW transistor; SONOS poly-silicon nanowire transistor; carrier concentration; channel regions; characterization; data endurance; data retention; doping type; drive current; fabrication; junctionless SONOS transistor; junctionless polysilicon-oxide-nitride-oxide-silicon; memory reliability characteristics; poly-silicon nanowire channels; program efficiency; source/drain; undoped channel; Fabrication; Logic gates; Nanoscale devices; Nonvolatile memory; SONOS devices; Silicon compounds; Thin film transistors; SONOS; junctionless; nanowire;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991721
