The impact of gate insulator dielectric constant on performance of CNTFETs at different ambient temperatures

Carbon nanotube field effect transistors are the most promising candidate for replacing of current silicon transistor technology. Choosing a suitable dielectric constant for a specific temperature range is important in determining device performance. For higher dielectric constant, rising up the temperature causes current ratio to diminish, while at lower dielectric constants the current ratio increases. An interesting case is observed for transistors with dielectric constants in the middle range which exhibit an approximately constant current ratio for all ambient temperatures considered.