Title :
Fabrication of morphology-tunable SiGe nanostructures grown on glass substrate
Author :
Chang, Hsu-Kai ; Lee, Si-Chen
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
SiGe nanostructures with different kinds of configurations have been successfully synthesized on glass substrate by chemical vapor deposition. The formation of different SiGe nanostructure can be easily tuned by controlling the growth conditions. The morphologies and compositions of the nanostructures were characterized by SEM and Raman spectroscopy. The present method provides an easy way for flexible nanofabrication and allows the application for manufacturing devices under low temperature processes.
Keywords :
chemical vapour deposition; nanoelectronics; substrates; Raman spectroscopy; SEM; SiGe; chemical vapor deposition; flexible nanofabrication; glass substrate; morphology-tunable SiGe nanostructures; Chemical vapor deposition; Glass; Morphology; Nanostructures; Silicon; Silicon germanium; Substrates; Raman; SiGe; growth; nanowire; transformation;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991725
