DocumentCode
2862330
Title
Fabrication of morphology-tunable SiGe nanostructures grown on glass substrate
Author
Chang, Hsu-Kai ; Lee, Si-Chen
Author_Institution
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
SiGe nanostructures with different kinds of configurations have been successfully synthesized on glass substrate by chemical vapor deposition. The formation of different SiGe nanostructure can be easily tuned by controlling the growth conditions. The morphologies and compositions of the nanostructures were characterized by SEM and Raman spectroscopy. The present method provides an easy way for flexible nanofabrication and allows the application for manufacturing devices under low temperature processes.
Keywords
chemical vapour deposition; nanoelectronics; substrates; Raman spectroscopy; SEM; SiGe; chemical vapor deposition; flexible nanofabrication; glass substrate; morphology-tunable SiGe nanostructures; Chemical vapor deposition; Glass; Morphology; Nanostructures; Silicon; Silicon germanium; Substrates; Raman; SiGe; growth; nanowire; transformation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991725
Filename
5991725
Link To Document