Lasing action in optically pumped Ga(NAsP) /GaP heterostructures

Author

Borck, S. ; Heber, J. ; Kunert, B. ; Volz, K. ; Stolz, W. ; Chatterjee, S. ; Rühle, W.W.

Author_Institution

Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20 cm^-1 is determined.

Keywords

III-V semiconductors; cryogenics; gallium arsenide; gallium compounds; laser beams; optical pumping; quantum well lasers; semiconductor growth; Ga(NAsP)-GaP; GaP; cryogenic temperature; distinct threshold behaviour; multiple quantum-well structure growth; optically pumped heterostructure lasing action; room temperature; temperature 293 K to 298 K; Epitaxial growth; Laser excitation; Optical materials; Optical pulse generation; Optical pumping; Quantum well lasers; Semiconductor materials; Spectroscopy; Substrates; Temperature; (140.5960) semiconductor lasers; (300.6470) semiconductor spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4627686

Filename

4627686