DocumentCode
2862488
Title
Effect of compressive strain on differential gain of GaSb-based type-I QW lasers
Author
Shterengas, L. ; Belenky, G. ; Kim, J.G. ; Gourevitch, A. ; Donetsky, D. ; Westerfeld, D. ; Martinelli, R.
Author_Institution
State Univ. of New York at Stony Brook, Stony Brook, NY
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
2.35 mum GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.
Keywords
III-V semiconductors; compressive strength; gallium compounds; laser beams; optical fabrication; quantum well lasers; Auger recombination coefficient; GaSbJk; carrier concentration; compressive strain effect; differential gain; diode laser; laser heterostructures; type-I QW laser; wavelength 2.35 mum; Capacitive sensors; Current density; Diode lasers; Gas lasers; Laser mode locking; Optical design; Quantum well lasers; Radiative recombination; Threshold current; Waveguide lasers; (140.2020) Diode lasers; (140.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627688
Filename
4627688
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