Title :
Effect of annealing ambient on the characteristics of a-IGZO thin film transistors
Author :
Lin, Cheng-I ; Yen, Tung-Wei ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Yee-Shin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.
Keywords :
II-VI semiconductors; annealing; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; a-IGZO thin film transistors; amorphous indium gallium zinc oxide; annealing ambient; annealing temperatures; gas ambient; oxygen ambient; sub-threshold swing; threshold voltage; Annealing; Electrodes; Films; Logic gates; Nanoscale devices; Temperature; Thin film transistors; TFT; a-IGZO; annealing ambient;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991738
