DocumentCode
2862519
Title
Synthesis and characterization of Tin Oxide nanostructures at atmospheric pressure
Author
Johari, Anima ; Rana, Vikas ; Bhatnagar, M.C.
Author_Institution
Phys. Dept., Indian Inst. of Technol., Delhi, New Delhi, India
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
We report the synthesis of Tin Oxide (SnO2) nanostructures on Silicon substrate and gold coated Silicon substrate by thermal evaporation method using a mixture of SnO2 and graphite powders at 1100°C in nitrogen (N2) ambience at atmospheric pressure. The synthesized SnO2 nanostructure shows polycrystalline nature with tetragonal phase. The SnO2 nanowires with uniform diameter (~35 nm) and length (~30 μm) grows with vapor-liquid-solid mechanism on the gold coated Silicon substrate whereas, the SnO2 nanorods with varying diameter grows with vapor-solid mechanism on the uncoated Silicon substrate.
Keywords
atmospheric pressure; elemental semiconductors; evaporation; graphite; nanorods; nanowires; nitrogen; silicon; tin compounds; SnO2; atmospheric pressure; gold coated silicon substrate; graphite powders; nanorods; nanowires; nitrogen ambience; polycrystalline nature; synthesized nanostructure; temperature 1100 C; tetragonal phase; thermal evaporation method; tin oxide nanostructures; uncoated silicon substrate; vapor-liquid-solid mechanism; vapor-solid mechanism; varying diameter; Annealing; Gold; Nanowires; Silicon; Substrates; Tin; gold; nanostructures; semiconducting materials; thermal evaporation; tin oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991739
Filename
5991739
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