• DocumentCode
    2862519
  • Title

    Synthesis and characterization of Tin Oxide nanostructures at atmospheric pressure

  • Author

    Johari, Anima ; Rana, Vikas ; Bhatnagar, M.C.

  • Author_Institution
    Phys. Dept., Indian Inst. of Technol., Delhi, New Delhi, India
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the synthesis of Tin Oxide (SnO2) nanostructures on Silicon substrate and gold coated Silicon substrate by thermal evaporation method using a mixture of SnO2 and graphite powders at 1100°C in nitrogen (N2) ambience at atmospheric pressure. The synthesized SnO2 nanostructure shows polycrystalline nature with tetragonal phase. The SnO2 nanowires with uniform diameter (~35 nm) and length (~30 μm) grows with vapor-liquid-solid mechanism on the gold coated Silicon substrate whereas, the SnO2 nanorods with varying diameter grows with vapor-solid mechanism on the uncoated Silicon substrate.
  • Keywords
    atmospheric pressure; elemental semiconductors; evaporation; graphite; nanorods; nanowires; nitrogen; silicon; tin compounds; SnO2; atmospheric pressure; gold coated silicon substrate; graphite powders; nanorods; nanowires; nitrogen ambience; polycrystalline nature; synthesized nanostructure; temperature 1100 C; tetragonal phase; thermal evaporation method; tin oxide nanostructures; uncoated silicon substrate; vapor-liquid-solid mechanism; vapor-solid mechanism; varying diameter; Annealing; Gold; Nanowires; Silicon; Substrates; Tin; gold; nanostructures; semiconducting materials; thermal evaporation; tin oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991739
  • Filename
    5991739