DocumentCode
2862548
Title
Residual stress mapping with a scanning phase-measuring acoustic microscope
Author
Meeks, S.W. ; Peter, D. ; Horne, D. ; Young, K. ; Novotny, V.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
fYear
1989
fDate
3-6 Oct 1989
Firstpage
809
Abstract
A high-resolution scanning phase-measuring acoustic microscope (SPAM) has been developed, and using the acoustoelastic effect, has been used to image the near-surface residual stress field around features etched in sputtered alumina. This microscope operates at 670 MHz and has a resolution of 5-10 μm, depending upon the amount of defocus. Relative-velocity changes of sample surface waves as small as 50 parts per million are resolved. Images of the stress field at the tip of a 400-μm-wide slot etched in alumina are presented and compared with a finite element simulation. The SPAM uses an unconventional acoustic lens with an anisotropic illumination pattern which can measure anisotropic effects and map residual stress fields with several-micrometer resolution and a stress sensitivity of 1/3 MPa in an alumina film
Keywords
acoustic microscopy; alumina; etching; internal stresses; sputtered coatings; stress measurement; 400 micron; 670 MHz; acoustic lens; acoustoelastic effect; anisotropic effects; anisotropic illumination pattern; defocus; finite element simulation; high-resolution scanning phase-measuring acoustic microscope; near-surface residual stress field; residual stress mapping; sample surface waves; slot; sputtered Al2O3; Acoustic measurements; Anisotropic magnetoresistance; Finite element methods; Lenses; Lighting; Microscopy; Residual stresses; Sputter etching; Surface acoustic waves; Unsolicited electronic mail;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location
Montreal, Que.
Type
conf
DOI
10.1109/ULTSYM.1989.67099
Filename
67099
Link To Document