DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ / metal-gate devices

Author

Cheng, Hui-Wen ; Chiu, Yung-Yueh ; Li, Yiming

Author_Institution

Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO₂/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.

Keywords

MOSFET; capacitance; current fluctuations; hafnium compounds; interface states; silicon compounds; 2D IT; DC-AC characteristic fluctuation; RD fluctuation; SiO₂-HfO₂; gate capacitance; high-κ metal gate MOSFET; interface trap; on-off state current; random dopant; random generated device; size 16 nm; threshold voltage; Capacitance; Fluctuations; Logic gates; Resource description framework; Silicon; Solid modeling; Three dimensional displays; 3D device simulation; DC/AC fluctuations; device variability; interface trap; random dopant; random position effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991747

Filename

5991747