• DocumentCode
    2862652
  • Title

    An RF-MEMS switch for high-power applications

  • Author

    Patel, Chirag D. ; Rebeiz, Gabriel M.

  • Author_Institution
    University of California - San Diego, La Jolla, 92093, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a stress- and temperature-stable RF-MEMS metal-contact switch exhibiting high power handling (>10 W) and high reliability (>100 million cycles at 2 W of RF power) for DC- to 40-GHz applications. The device, which employs a hybrid Au/Ru contact, is fabricated with an all-metal surface micro-machining process and achieves a contact force of 1.5 mN per contact pair at 90 V actuation, as well as a restoring force of 1.0 mN. Measured results based on unpackaged devices in open-air conditions show that the on-resistance is 1–2 Ω (<1 Ω with cleaning), the off-capacitance is 8 fF, the pull-in voltage is 68 V, and the switching and release time is <10 µs.
  • Keywords
    Contacts; Force; Pollution measurement; Radio frequency; Stress; Switches; Temperature measurement; RF MEMS; high-power; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259363
  • Filename
    6259363