• DocumentCode
    2862666
  • Title

    Nonlinearity consideration of GaN based envelope tracking power amplifiers

  • Author

    Draxler, P.J. ; Kimball, D.F. ; Asbeck, P.M.

  • Author_Institution
    Qualcomm, Inc., 5775 Morehouse Dr., San Diego, CA, 92121, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    GaN devices have led to power amplifiers (PA) with exceptional efficiency over very wide operating ranges. Most digital communication signals have a high peak to average ratio, resulting in excessive voltage biasing overhead most of the time. By modulating the power supply voltage to match the needs of the instantaneous RF signal, one can achieve greater efficiency, but this will impact the PA linearity. This paper presents behavioral modeling and digital predistortion techniques being used for envelope tracking GaN PA.
  • Keywords
    Adaptation models; Gallium nitride; Polynomials; Power supplies; Predistortion; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259364
  • Filename
    6259364