DocumentCode
2862666
Title
Nonlinearity consideration of GaN based envelope tracking power amplifiers
Author
Draxler, P.J. ; Kimball, D.F. ; Asbeck, P.M.
Author_Institution
Qualcomm, Inc., 5775 Morehouse Dr., San Diego, CA, 92121, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
GaN devices have led to power amplifiers (PA) with exceptional efficiency over very wide operating ranges. Most digital communication signals have a high peak to average ratio, resulting in excessive voltage biasing overhead most of the time. By modulating the power supply voltage to match the needs of the instantaneous RF signal, one can achieve greater efficiency, but this will impact the PA linearity. This paper presents behavioral modeling and digital predistortion techniques being used for envelope tracking GaN PA.
Keywords
Adaptation models; Gallium nitride; Polynomials; Power supplies; Predistortion; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259364
Filename
6259364
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