Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

Author

Ou, S.L. ; Kuo, P.C. ; Tsai, T.L. ; Shen, C.L. ; Cheng, C.P. ; Yeh, C.Y. ; Chang, H.F. ; Lee, C.T. ; Chiang, D.

Author_Institution

Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ~ 165°C and 310°C~ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

Keywords

copper alloys; crystallisation; germanium alloys; jitter; laser beam applications; optical disc storage; recording; sputter deposition; write-once storage; GeCu-Si; Si; bilayer recording thin film preparation; crystallization; jitter; magnetron sputtering; polycarbonate substrate; silicon wafer; size 6 nm; thermal property; write-once blue laser optical recording; write-once blue-ray optical disc; Annealing; Crystallization; Films; Jitter; Optical recording; Reflectivity; Silicon; GeCu/Si bilayer; write-once blue laser optical recording;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991749

Filename

5991749