Title :
Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording
Author :
Ou, S.L. ; Kuo, P.C. ; Tsai, T.L. ; Shen, C.L. ; Cheng, C.P. ; Yeh, C.Y. ; Chang, H.F. ; Lee, C.T. ; Chiang, D.
Author_Institution :
Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ~ 165°C and 310°C~ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.
Keywords :
copper alloys; crystallisation; germanium alloys; jitter; laser beam applications; optical disc storage; recording; sputter deposition; write-once storage; GeCu-Si; Si; bilayer recording thin film preparation; crystallization; jitter; magnetron sputtering; polycarbonate substrate; silicon wafer; size 6 nm; thermal property; write-once blue laser optical recording; write-once blue-ray optical disc; Annealing; Crystallization; Films; Jitter; Optical recording; Reflectivity; Silicon; GeCu/Si bilayer; write-once blue laser optical recording;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991749
