• DocumentCode
    2862765
  • Title

    Investigation on the stoichiometric deviations of electrodeposited nano-CdTe compound by a novel numerical simulation

  • Author

    Yang, Shu-Ying ; Ueng, Herng-Yih

  • Author_Institution
    Dept. of Inf. Manage., Fortune Inst. of Technol., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A kinetic model for linear-sweep voltammetry has been developed and modified. The simulation of CdTe electrodeposition has been performed in the acidic electrolyte containing reducible ions of Cd2+ and HTeO2+, and the potential can be predicted to get good quality photosensitive material. A numerical simulation for the stoichiometric determination of electrodepo-sited CdTe thin film is presented for the first time, and the stoi-chiometric deviation can be controlled accurately. Well-connected granular CdTe thin films have been deposited at PPS, but are slightly p-type due to cadmium vacancies (VCd). In order to determine the stoichiometry of samples with a small deviation, it is necessary to decrease the concentration of HTeO2+. The stoi-chiometry deviations fall in the 50.001% range can be estimated. The control of stoichiometric deviation in Cd-rich is much better than in Te-rich by electrodeposited potential.
  • Keywords
    cadmium compounds; electrodeposits; electrolytes; nanostructured materials; numerical analysis; semiconductor thin films; stoichiometry; voltammetry (chemical analysis); CdTe; acidic electrolyte; cadmium vacancies; electrodeposited cadmium telluride thin film; kinetic model; linear-sweep voltammetry; nanostructured material; numerical simulation; photosensitive material; stoichiometric determination; stoichiometric deviation; Current density; Electric potential; Equations; Mathematical model; Numerical models; Numerical simulation; Semiconductor process modeling; CdTe; electrodeposition; linear-sweep voltammetry; numerical simulation; stoichiometric deviation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991755
  • Filename
    5991755