DocumentCode :
2862765
Title :
Investigation on the stoichiometric deviations of electrodeposited nano-CdTe compound by a novel numerical simulation
Author :
Yang, Shu-Ying ; Ueng, Herng-Yih
Author_Institution :
Dept. of Inf. Manage., Fortune Inst. of Technol., Kaohsiung, Taiwan
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
2
Abstract :
A kinetic model for linear-sweep voltammetry has been developed and modified. The simulation of CdTe electrodeposition has been performed in the acidic electrolyte containing reducible ions of Cd2+ and HTeO2+, and the potential can be predicted to get good quality photosensitive material. A numerical simulation for the stoichiometric determination of electrodepo-sited CdTe thin film is presented for the first time, and the stoi-chiometric deviation can be controlled accurately. Well-connected granular CdTe thin films have been deposited at PPS, but are slightly p-type due to cadmium vacancies (VCd). In order to determine the stoichiometry of samples with a small deviation, it is necessary to decrease the concentration of HTeO2+. The stoi-chiometry deviations fall in the 50.001% range can be estimated. The control of stoichiometric deviation in Cd-rich is much better than in Te-rich by electrodeposited potential.
Keywords :
cadmium compounds; electrodeposits; electrolytes; nanostructured materials; numerical analysis; semiconductor thin films; stoichiometry; voltammetry (chemical analysis); CdTe; acidic electrolyte; cadmium vacancies; electrodeposited cadmium telluride thin film; kinetic model; linear-sweep voltammetry; nanostructured material; numerical simulation; photosensitive material; stoichiometric determination; stoichiometric deviation; Current density; Electric potential; Equations; Mathematical model; Numerical models; Numerical simulation; Semiconductor process modeling; CdTe; electrodeposition; linear-sweep voltammetry; numerical simulation; stoichiometric deviation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991755
Filename :
5991755
Link To Document :
بازگشت