DocumentCode
2862806
Title
The SPIN rectifier, a new fast-recovery device
Author
Hower, P.L. ; Weaver, C.E.
Author_Institution
Unitrode Corp., Watertown, MA, USA
fYear
1988
fDate
11-14 April 1988
Firstpage
709
Abstract
A fast-recovery rectifier design is described for blocking voltages in excess of 50 V. The SPIN rectifier is a parallel combination of dispersed Schottky and p-i-n rectifiers. Recovery time of 35 ns is achieved at I/sub F/=70 A for breakdown voltages in excess of 200 V. Experimental studies of reverse recovery, the effect of pattern variation, increased n-layer thickness, and reverse current are described.<>
Keywords
Schottky-barrier diodes; solid-state rectifiers; 35 ns; 70 A; SPIN rectifier; Schottky rectifiers; breakdown voltages; fast-recovery device; n-layer thickness; p-i-n rectifiers; pattern variation; recovery time; reverse current; Costs; Heat recovery; MOSFET circuits; P-i-n diodes; PIN photodiodes; Power supplies; Pulse width modulation; Rectifiers; Switching frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18200
Filename
18200
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