Compact radio frequency model of graphene resonant channel transistor

Author

Li, Oupeng ; Xu, Yuehang ; Wu, Yunqiu ; Guo, Yunchuan ; Zhang, Yong ; Xu, Ruimin ; Yan, Bo

Author_Institution

Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731 China

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

Radio frequency nano-electromechanical resonators have great potential in the application of bio-sensor, quantum physics studies, and high frequency communications. The theory and model of radio frequency graphene resonant channel transistor is presented in this paper. A compact electrical equivalent circuit model has been given out based on the analysis of electromechanical model of doubly clamped beam and electronic field effect transistor model. And the experimental results show that the simulation result fits the measurement results excellently. The results of this paper can impetus the development handset high-sensitivities sensors.

Keywords

Capacitance; Equivalent circuits; Integrated circuit modeling; Logic gates; Optical resonators; Resonant frequency; Transistors; Compact model; Equivalent circuits; Graphene transistor; Nanoelectromechanical systems; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6259377

Filename

6259377