• DocumentCode
    2862969
  • Title

    Wideband harmonically-tuned GaN Doherty power amplifier

  • Author

    Bathich, Khaled ; Boeck, Georg

  • Author_Institution
    Microwave Engineering Lab, Berlin Institute of Technology, 10587, Germany
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered, resulting in superior performance over the targeted design band. The maximum output power ranged from 48.2 dBm to 49.6 dBm. 6 dB back-off efficiencies of η6dB≥53 % (power-added efficiency PAE≥50 %) were measured over 1.7–2.25 GHz (28 % bandwidth). When linearized using digital pre-distortion (DPD), the Doherty amplifier had adjacent-channel leakage ratio (ACLR) of −43 dBc for a long-term evolution (LTE) signal at 1.85 GHz (η=50 %) and −44 dBc for a wideband code-division multiple access (W-CDMA) signal at 2.11 GHz (η=41 %), at average output power of 41.0 dBm and 40.5 dBm, respectively.
  • Keywords
    Harmonic analysis; Impedance; Linearity; Power amplifiers; Power generation; Wideband; Broadband amplifiers; Doherty amplifier; HEMTs; harmonic tuning; high power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259385
  • Filename
    6259385