Title :
Time domain travelling wave model for simulation of passive mode locking in semiconductor quantum dot lasers
Author :
Rossetti, M. ; Bardella, P. ; Gioannini, M. ; Montrosset, I.
Author_Institution :
DELEN, Politec. di Torino, Torino, Italy
Abstract :
The authors implemented a new finite difference time domain travelling wave (TDTW) model for quantum dot (QD) lasers able to treat both the QD ground states (GSs) and excited states (ESs) contributions to the gain and refractive index change and to properly describe the carrier dynamics in the saturable absorber section as a function of the applied reverse bias. The response of the QDs to the electromagnetic field is implemented in time domain as a numerical filter applied at each time step in each longitudinal slice of the cavity. A small set of rate equations modelling carrier dynamics in the GS, ES, wetting layer (WL) and SCH is considered.
Keywords :
electromagnetic fields; excited states; ground states; laser mode locking; optical saturable absorption; quantum dot lasers; refractive index; semiconductor quantum dots; electromagnetic field; excited states; finite difference time domain travelling wave; ground states; passive mode locking; refractive index; saturable absorber section; semiconductor quantum dot lasers; Electromagnetic fields; Electronic switching systems; Finite difference methods; Laser excitation; Laser mode locking; Laser transitions; Quantum dot lasers; Refractive index; Semiconductor lasers; Stationary state;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5196365
