Title :
L-band 360W and 65% PAE GaN amplifier with mixed Class-E / F harmonic control
Author :
Yamanaka, Keiji ; Yunoue, N. ; Chaki, Sagar ; Nakayama, Makoto ; Hirano, Yoshikuni
Author_Institution :
Mitsubishi Electric Corporation, Information Technology R&D Center, Ofuna 5-1-1, 247-8501 Kamakura, Japan
Abstract :
In this paper, an L-band partially internally matched GaN amplifier is presented, which is designed so that Class-F condition is met for the 2nd harmonic and Class-E condition is met for the 3rd harmonic. Utilizing these harmonic conditions, high output power together with high efficiency was obtained overcoming power limitation of Class-E. As a result, 360W output power and 65% PAE was successfully obtained at L-band with in-house GaN HEMT.
Keywords :
HEMTs; Indexes; Length measurement; MODFET; power amplifiers;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259397
