Title :
Characterization of short and narrow channel effects for CAD-IGFET model
Author :
Kotecha, H. ; De La Moneda, F. ; Beilstein, K.
Author_Institution :
IBM Corp., Manassas, VA, USA
Keywords :
Doping; Equations; Geometry; Intrusion detection; Length measurement; MOSFET circuits; Physics; Tail; Threshold voltage; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155682
