Graphene frequency doubler with record 3GHz bandwidth and the maximum conversion gain prospects

We report a 500nm graphene field-effect transistor operating at the Dirac point for frequency doubling with maximum output power of −23dBm and a record bandwidth of 3GHz, 2× higher than the state-of-the-art. The experimental device exceeds its ft and fmax by about 50%. Contact resistance degrades the performance of the experimental GFET. In the limit of negligible non-idealities and maximum gate capacitance, the conversion gain approaches lossless frequency doubling. The record performance of the graphene doubler is enabled by the growth of high-quality graphene affording carrier mobilities as high as 5000cm²/V-s and 2200cm²/V-s on smooth quartz and flexible substrates respectively.