Capping layer induced degradations in nano MOSFETs with scaled IL

Author

Lee, Tung-Hsing ; Chen, S.-M. ; Hsu, Chia-Wei ; Fang, Yean-Kuen ; Juang, Feng-Renn ; Hsu, Che-Hua ; Cheng, Li-Wei ; Lai, Chien-Ming ; Chen, Yi-Wen

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

EOT scale down is a critical issue in LaO/AlO capped Hf-based devices, because it will result in serious V_FB roll-off. The incorporation of capping layer induces more traps in the gate stack. These traps are oxygen vacancy related defects and are sensitive to reliability stress. By using the oxygen vacancies detection method, we demonstrate that these oxygen vacancy defects are near to IL (SiO₂). In addition, the interface states are found strongly dependent on the V_FB roll-off, especially for IL scaled device.

Keywords

MOSFET; aluminium compounds; hafnium; lanthanum compounds; nanoelectronics; semiconductor device reliability; silicon compounds; Hf; LaO-AlO; SiO₂; capping layer induced degradations; gate stack; nanoMOSFET; oxygen vacancies detection method; reliability stress; Electron traps; Hafnium oxide; Logic gates; MOS devices; MOSFET circuits; Materials; Stress; Hf-based CMOSFET; cap layer; interfacial layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991785

Filename

5991785