Title :
Capping layer induced degradations in nano MOSFETs with scaled IL
Author :
Lee, Tung-Hsing ; Chen, S.-M. ; Hsu, Chia-Wei ; Fang, Yean-Kuen ; Juang, Feng-Renn ; Hsu, Che-Hua ; Cheng, Li-Wei ; Lai, Chien-Ming ; Chen, Yi-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
EOT scale down is a critical issue in LaO/AlO capped Hf-based devices, because it will result in serious VFB roll-off. The incorporation of capping layer induces more traps in the gate stack. These traps are oxygen vacancy related defects and are sensitive to reliability stress. By using the oxygen vacancies detection method, we demonstrate that these oxygen vacancy defects are near to IL (SiO2). In addition, the interface states are found strongly dependent on the VFB roll-off, especially for IL scaled device.
Keywords :
MOSFET; aluminium compounds; hafnium; lanthanum compounds; nanoelectronics; semiconductor device reliability; silicon compounds; Hf; LaO-AlO; SiO2; capping layer induced degradations; gate stack; nanoMOSFET; oxygen vacancies detection method; reliability stress; Electron traps; Hafnium oxide; Logic gates; MOS devices; MOSFET circuits; Materials; Stress; Hf-based CMOSFET; cap layer; interfacial layer;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991785
