• DocumentCode
    2863301
  • Title

    Optimal device design of FinFETs on a bulk substrate

  • Author

    Liao, Yi-Bo ; Hsu, Wei-Chou ; Chiang, Meng-Hsueh ; Li, Hsun ; Lin, Chia-Long ; Lai, Yu-Shen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.
  • Keywords
    MOSFET; integrated circuit design; semiconductor doping; bulk FinFET; bulk substrate; doped substrate; optimal device design; thin isolation oxide; Delay; Doping; FinFETs; ISO; Leakage current; Logic gates; Substrates; FinFET; SOI; bulk FinFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991787
  • Filename
    5991787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2863301