Title :
Optimal device design of FinFETs on a bulk substrate
Author :
Liao, Yi-Bo ; Hsu, Wei-Chou ; Chiang, Meng-Hsueh ; Li, Hsun ; Lin, Chia-Long ; Lai, Yu-Shen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.
Keywords :
MOSFET; integrated circuit design; semiconductor doping; bulk FinFET; bulk substrate; doped substrate; optimal device design; thin isolation oxide; Delay; Doping; FinFETs; ISO; Leakage current; Logic gates; Substrates; FinFET; SOI; bulk FinFET;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991787
