• DocumentCode
    2863334
  • Title

    Broadband and low-loss Ruthroff-type transmission line transformer in integrated passive devices technology

  • Author

    Chung, Hua-Yen ; Hsu, Yuan-Chia ; Chiou, Hwann-Kaeo ; Chang, Da-Chiang ; Juang, YingZong

  • Author_Institution
    Department of Electrical Engineering, National Central University, Jhongli, Taiwan, R.O.C.
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Two broadband, low-loss Ruthroff-type transmission line transformers (TLTs) that are implemented in integrated passive devices (IPD) technology and intended for use in IEEE 802.11b/g WLAN systems are presented in this paper. The TLTs are realized by spiral broadside-coupled lines with proper characteristic impedances to optimize the insertion loss and bandwidth. The measured minimum insertion losses of 1∶4 and 1∶9 TLTs are 0.5 dB at 2.2 GHz and 0.57 dB at 2.4 GHz, respectively. The correspondent 1-dB bandwidths of these TLTs are 175% and 140%. The chip areas of the TLTs are 0.27 mm2 and 0.34 mm2.
  • Keywords
    Abstracts; CMOS integrated circuits; CMOS technology; Gallium arsenide; Indexes; Substrates; Windings; Broadband impedance transformer; integrated passive device (IPD); transmission line transformer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259408
  • Filename
    6259408