Title :
Broadband and low-loss Ruthroff-type transmission line transformer in integrated passive devices technology
Author :
Chung, Hua-Yen ; Hsu, Yuan-Chia ; Chiou, Hwann-Kaeo ; Chang, Da-Chiang ; Juang, YingZong
Author_Institution :
Department of Electrical Engineering, National Central University, Jhongli, Taiwan, R.O.C.
Abstract :
Two broadband, low-loss Ruthroff-type transmission line transformers (TLTs) that are implemented in integrated passive devices (IPD) technology and intended for use in IEEE 802.11b/g WLAN systems are presented in this paper. The TLTs are realized by spiral broadside-coupled lines with proper characteristic impedances to optimize the insertion loss and bandwidth. The measured minimum insertion losses of 1∶4 and 1∶9 TLTs are 0.5 dB at 2.2 GHz and 0.57 dB at 2.4 GHz, respectively. The correspondent 1-dB bandwidths of these TLTs are 175% and 140%. The chip areas of the TLTs are 0.27 mm2 and 0.34 mm2.
Keywords :
Abstracts; CMOS integrated circuits; CMOS technology; Gallium arsenide; Indexes; Substrates; Windings; Broadband impedance transformer; integrated passive device (IPD); transmission line transformer;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259408