Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB

Author

Chu, Wen-Huei ; Liu, Chuan-Pu

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

ZnO nanowires were implanted with Ga⁺ ions with a dose of 10¹² cm^-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron-microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ~229.5±2.8 meV.

Keywords

III-V semiconductors; electric resistance measurement; field effect transistors; focused ion beam technology; gallium; nanowires; scanning electron microscopes; zinc compounds; FIB; Ga; ZnO; electrical activation energy; electrical properties; field effect transistor device; focused-ion-beam; hole carriers; ohmic contact behavior; resistance measurements; scanning-electron-microscope; single p-type nanowire; thermal activation; Doping; FETs; Logic gates; Nanoscale devices; Resistance; Semiconductor device measurement; Zinc oxide; Focus Ion Beam; Ga-doped ZnO; electrical property;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991791

Filename

5991791