DocumentCode

2863538

Title

High performance, MOS EPROMs using a stacked-gate cell

Author

Salsbury, P. ; Morgan, W. ; Perlegos, G. ; Simko, R.

Author_Institution

Intel Corp., Santa Clara, CA, USA

Volume

XX

fYear

1977

fDate

16-18 Feb. 1977

Firstpage

186

Lastpage

187

Keywords

Breakdown voltage; Capacitance; Circuit simulation; Decoding; Driver circuits; EPROM; Microprocessors; Nonvolatile memory; PROM; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1977.1155707

Filename

1155707