• DocumentCode
    2863578
  • Title

    Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

  • Author

    Lee, Jong-Ho ; Joe, Sung-Min

  • Author_Institution
    Sch. of EECS & ISRC, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Recently, random telegraph noise (RTN) caused by electrons capture/emission at traps and the reliability of IPD Layer in NAND flash memory cells become important issues as the size of flash memory cell scales down. In this work, we discuss the position effect of ΔVth due to RTN and the exact position and energy of trap by considering channel resistances of pass cells. And we also investigate the hysteresis phenomenon and transient current variation due to the traps in the IPD layer.
  • Keywords
    flash memories; hysteresis; integrated circuit reliability; tunnelling; IPD layer; channel resistance; floating gate NAND flash memory cell strings; hysteresis phenomenon; interpoly dielectrics; random telegraph noise; reliability issue; transient current variation; tunneling; Electric potential; Energy states; Equations; Flash memory; Hysteresis; Nonvolatile memory; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991803
  • Filename
    5991803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2863578