DocumentCode :
2863611
Title :
Circuit device interface techniques for a 5-W 5-GHz bipolar microwave power transistor
Author :
Schreyer, G.
Author_Institution :
TRW Semiconductors, Lawndale, CA, USA
Volume :
XX
fYear :
1977
fDate :
16-18 Feb. 1977
Firstpage :
170
Lastpage :
171
Keywords :
Contracts; Frequency; Microwave circuits; Microwave devices; Microwave theory and techniques; Power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1977.1155710
Filename :
1155710
Link To Document :
بازگشت