DocumentCode
2863629
Title
Non-volatile memory device using graphene oxide
Author
Hong, Seul Ki ; Cho, Byung Jin
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.
Keywords
graphene; random-access storage; semiconductor device reliability; RRAM; flexibility; graphene oxide; nonvolatile memory device; reliability; resistive switching memory; stable switching; Films; Indium tin oxide; Performance evaluation; Reliability; Resistance; Substrates; Switches; Flexible device; Graphene; RRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991806
Filename
5991806
Link To Document