Title :
Non-volatile memory device using graphene oxide
Author :
Hong, Seul Ki ; Cho, Byung Jin
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.
Keywords :
graphene; random-access storage; semiconductor device reliability; RRAM; flexibility; graphene oxide; nonvolatile memory device; reliability; resistive switching memory; stable switching; Films; Indium tin oxide; Performance evaluation; Reliability; Resistance; Substrates; Switches; Flexible device; Graphene; RRAM;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991806
