DocumentCode

2863676

Title

A 4-GHz 12-W transistor amplifier utilizing a self-aligned bipolar structure

Author

Tsuzuki, N. ; Saito, Yuya ; Sakai, Tadashi

Author_Institution

Nippon Electric Co., Ltd., Kawasaki, Japan

Volume

XX

fYear

1977

fDate

16-18 Feb. 1977

Firstpage

162

Lastpage

163

Keywords

Bipolar transistors; Circuits; Electrodes; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1977.1155715

Filename

1155715