DocumentCode
2863734
Title
Progress with high efficiency IMPATT diodes
Author
Gewartowski, J.
Author_Institution
Bell Telephone Laboratories, Allentown, PA, USA
Volume
XX
fYear
1977
fDate
16-18 Feb. 1977
Firstpage
91
Lastpage
91
Keywords
Doping profiles; High power amplifiers; Noise level; Noise measurement; Power generation; Radio frequency; Radiofrequency amplifiers; Schottky diodes; Semiconductor device noise; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1977.1155719
Filename
1155719
Link To Document